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| DTC144VUA / DTC144VKA / DTC144VSA Transistors Digital transistor (built-in resistors) DTC144VUA / DTC144VKA / DTC144VSA !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 3) Only the on / off conditions need to be set for operation, making device design easy. 4) Higher mounting densities can be achieved. !External dimensions (Units : mm) DTC144VUA (1) 0.65 0.65 0.3 (3) 1.25 2.1 0.2 (2) 1.3 2.0 0.1to0.4 0to0.1 ROHM : UMT3 EIAJ : SC-70 (1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain) 0.15 Each lead has same dimensions (1) DTC144VKA 0.7 (3) 0.4 1.6 2.8 0.15 0.95 0.95 1.9 2.9 (2) 0.9 IN R1 R2 OUT ROHM : SMT3 EIAJ : SC-59 DTC144VSA 3 0.3to0.6 0to0.1 Each lead has same dimensions GND IN OUT 4 2 GND (15Min.) 3Min. 0.45 0.8 1.1 !Equivalent circuit (1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain) 2.5 5 0.5 0.45 ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base (1) (2) (3) Taping specifications !Absolute maximum ratings (Ta = 25C) Parameter Supply voltage Input voltage Output curren DTC144VUA / DTC144VKA Power dissipation DTC144VSA Junction temperature Storage temperature Symbol VCC VI IO IC(Max.) Pd Tj Tstg Limits 50 -15~+40 30 100 200 300 150 -55~+150 Unit V V mA mW C C !Packaging, marking and packaging specifications Type Package Marking Packaging code Basic ordering unit (pieces) DTC144VUA UMT3 166 T106 3000 DTC144VKA SMT3 E66 T146 3000 DTC144VSA SPT - TP 5000 !Electrical characteristics (Ta = 25C) Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT Min. - 6 - - - 33 32.9 0.17 - Typ. - - 0.1 - - - 47 0.21 250 Max. 1 - 0.3 0.16 0.5 - 61.1 0.26 - Unit V V mA A - k - MHz Conditions VCC=5V , IO=100A VO=0.3V , IO=2mA IO=10mA , II=0.5mA VI=5V VCC=50V , VI=0V IO=5mA , VO=5V - - VCE=10V , IE=-5mA , f=100MHz Transition frequency Transition frequency of the device. |
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